Paper Title
A Study on The Effect of Source-Drain Length on Device Characteristics of Junction less Transistor

This paper presents a study on the effect of source-drain length on the performance of a symmetric double gate junction less transistor. The comparison for electrical characteristics of the device is done for different values of source-drain length by extensive simulation in TCAD. The simulation study shows that the structure with shorter source-drain region posses higher Ion/Ioff ratio and higher on current. However, effect of DIBL will be more in the device with shorter sourcedrain length. Keywords - JLT, Double Gate, Source-drain Length, Symmetric.